BFQ34T Specs and Replacement
Type Designator: BFQ34T
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3700 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO50
BFQ34T Substitution
- BJT ⓘ Cross-Reference Search
BFQ34T datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ34 DESCRIPTION PINNING NPN transistor encapsulated in a 4 PIN DESCRIPTION lead SOT122A envelope with a Code BFQ34/01 ceramic cap. All leads are isolated ... See More ⇒
Detailed specifications: BFQ31R, BFQ32, BFQ32C, BFQ32M, BFQ32S, BFQ33, BFQ33C, BFQ34, 2SC2240, BFQ35, BFQ36, BFQ37, BFQ38, BFQ38S, BFQ39, BFQ40, BFQ41
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