BFQ34T Datasheet, Equivalent, Cross Reference Search
Type Designator: BFQ34T
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3700 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO50
BFQ34T Transistor Equivalent Substitute - Cross-Reference Search
BFQ34T Datasheet (PDF)
9.1. Size:60K philips
bfq34 cnv 2.pdf
bfq34 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFQ34NPN 4 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 4 GHz wideband transistor BFQ34DESCRIPTION PINNINGNPN transistor encapsulated in a 4PIN DESCRIPTIONlead SOT122A envelope with aCode: BFQ34/01ceramic cap. All leads are isolated
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
