BFQ89 Datasheet and Replacement

   Type Designator: BFQ89
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 6000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO131

 BFQ89 Transistor Equivalent Substitute - Cross-Reference Search