BFR181T Datasheet, Equivalent, Cross Reference Search
Type Designator: BFR181T
SMD Transistor Code: RF_RFs
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.16 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 8000 MHz
Collector Capacitance (Cc): 0.3 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT23
BFR181T Transistor Equivalent Substitute - Cross-Reference Search
BFR181T Datasheet (PDF)
bfr181.pdf
BFR 181NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA fT = 8GHz F = 1.45dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 181 RFs Q62702-F1314 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values Unit
bfr181w.pdf
BFR 181WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA fT = 8GHz F = 1.45dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 181W RFs Q62702-F1491 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values Un
bfr181.pdf
BFR181Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration Pack
bfr181w.pdf
BFR181WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA3 21 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensit
bfr181.pdf
SMD Type TransistorsTransistorsNPN Silicon RF TransistorBFR181(KFR181) FeaturesSOT-23Unit: mm For low noise, high-gain broadband amplifiers at+0.12.9-0.1+0.10.4 -0.1collector currents from 0.5 mA to 12 mA3 fT = 8 GHz F = 1.45dB at 900MHz12+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25 Parame
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
