BFR35 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFR35
SMD Transistor Code: GA
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 12 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 3000 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT23
BFR35 Transistor Equivalent Substitute - Cross-Reference Search
BFR35 Datasheet (PDF)
bfr35ap.pdf
BFR 35APNPN Silicon RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mAESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 35AP GEs Q62702-F938 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emit
bfr35ap.pdf
BFR35APLow Noise Silicon Bipolar RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration PackageBFR35AP GEs SOT
bfr35ap.pdf
isc Silicon NPN RF Transistor BFR35APDESCRIPTIONLow Noise FigureNF = 1.8 dB TYP. @V = 6 V, I = 2 mA, f = 900 MHzCE CHigh GainS 2 = 12.5 dB TYP. @V = 8 V,I = 15 mA,f = 900 MHz21e CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low distortion broadband amplifiers andoscillators.ABSOLUTE MAXIMUM R
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
