All Transistors. BFR35 Datasheet

 

BFR35 Datasheet and Replacement


   Type Designator: BFR35
   SMD Transistor Code: GA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 12 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 3000 MHz
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT23
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BFR35 Datasheet (PDF)

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BFR35

BFR 35APNPN Silicon RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mAESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 35AP GEs Q62702-F938 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emit

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BFR35

BFR35APLow Noise Silicon Bipolar RF Transistor For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration PackageBFR35AP GEs SOT

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BFR35

isc Silicon NPN RF Transistor BFR35APDESCRIPTIONLow Noise FigureNF = 1.8 dB TYP. @V = 6 V, I = 2 mA, f = 900 MHzCE CHigh GainS 2 = 12.5 dB TYP. @V = 8 V,I = 15 mA,f = 900 MHz21e CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low distortion broadband amplifiers andoscillators.ABSOLUTE MAXIMUM R

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: NTE2547 | 2SA357 | HUN5113 | MJE13002I5 | HD2F3P | RN1909 | D11C10F1

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