All Transistors. BFR36 Datasheet

 

BFR36 Datasheet and Replacement


   Type Designator: BFR36
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1000 MHz
   Collector Capacitance (Cc): 2.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO39
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BFR36 Datasheet (PDF)

 0.1. Size:1705K  infineon
 bfr360f.pdf pdf_icon

BFR36

 0.2. Size:606K  infineon
 bfr360l3.pdf pdf_icon

BFR36

BFR360L3Low Noise Silicon Bipolar RF Transistor Low voltage/ Low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free thin small leadless package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device,

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N5661U3 | 181T2A | BDX65B | 2SC1290 | 2C3960 | BSS82BL | 2SD1164

Keywords - BFR36 transistor datasheet

 BFR36 cross reference
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