BFR36 Specs and Replacement

Type Designator: BFR36

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1000 MHz

Collector Capacitance (Cc): 2.2 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO39

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BFR36 datasheet

 0.1. Size:1705K  infineon

 bfr360f.pdf pdf_icon

BFR36

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 0.2. Size:606K  infineon

 bfr360l3.pdf pdf_icon

BFR36

BFR360L3 Low Noise Silicon Bipolar RF Transistor Low voltage/ Low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure 1.0 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free thin small leadless package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device,... See More ⇒

Detailed specifications: BFR280, BFR280W, BFR34, BFR34A, BFR35, BFR35A, BFR35AP, BFR35AR, 2SD669, BFR36A, BFR37, BFR38, BFR39, BFR39TO5, BFR40, BFR40TO5, BFR41

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