BFR74 Specs and Replacement
Type Designator: BFR74
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.12 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: OV16
BFR74 Substitution
- BJT ⓘ Cross-Reference Search
BFR74 datasheet
BFR740EL3 SiGe C NPN RF bipolar transistor Product description The BFR740EL3 is a wideband RF heterojunction bipolar transistor (HBT) available in a low profile package. Feature list Low noise figure NFmin = 0.5 dB at 1.9 GHz 3 V, 6 mA; 0.8 dB at 5.5 GHz, 3 V, 6 mA High power gain Gms = 20 dB at 5.5 GHz, 3 V, 15 mA Low profile and small form factor leadless package High... See More ⇒
BFR740L3RH SiGe C NPN RF bipolar transistor Product description The BFR740L3RH is a wideband RF heterojunction bipolar transistor (HBT) available in a low profile package. Feature list Low noise figure NFmin = 0.5 dB at 1.9 GHz 3 V, 6 mA; 0.8 dB at 5.5 GHz, 3 V, 6 mA High power gain Gms = 20 dB at 5.5 GHz, 3 V, 15 mA Low profile and small form factor leadless package Produc... See More ⇒
Detailed specifications: BFR69VI, BFR70, BFR70A, BFR70B, BFR70VI, BFR71, BFR72, BFR73, 2SD718, BFR75, BFR76, BFR77, BFR78, BFR79, BFR79TO5, BFR80, BFR80TO5
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