All Transistors. BFR90 Datasheet

 

BFR90 Datasheet and Replacement


   Type Designator: BFR90
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.18 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3000 MHz
   Collector Capacitance (Cc): 0.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO51
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BFR90 Datasheet (PDF)

 0.1. Size:76K  motorola
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BFR90

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BFR90/DThe RF LineNPN SiliconBFR90High-Frequency TransistorDesigned primarily for use in highgain, lownoise, smallsignal amplifiers.Also used in applications requiring fast switching times. High CurrentGain Bandwidth Product fT = 5.0 GHz (Typ) @ IC = 14 mAfT = 5.0 GHz @ 14 mA Low Noise F

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: D1815-R

Keywords - BFR90 transistor datasheet

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