All Transistors. BFR90H Datasheet

 

BFR90H Datasheet and Replacement


   Type Designator: BFR90H
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2500 MHz
   Collector Capacitance (Cc): 0.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO51
 

 BFR90H Substitution

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BFR90H Datasheet (PDF)

 9.1. Size:76K  motorola
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BFR90H

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BFR90/DThe RF LineNPN SiliconBFR90High-Frequency TransistorDesigned primarily for use in highgain, lownoise, smallsignal amplifiers.Also used in applications requiring fast switching times. High CurrentGain Bandwidth Product fT = 5.0 GHz (Typ) @ IC = 14 mAfT = 5.0 GHz @ 14 mA Low Noise F

Datasheet: BFR88TO5 , BFR89 , BFR89A , BFR89B , BFR89TO5 , BFR90 , BFR90A , BFR90B , 2SD313 , BFR91 , BFR91A , BFR91H , BFR92 , BFR92A , BFR92ALT1 , BFR92AR , BFR92L .

History: 2SC4143 | 3DD511 | 2SC1657 | CV7333 | 2SC2151 | KC846B | 2SC833

Keywords - BFR90H transistor datasheet

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