All Transistors. BFR90H Datasheet

 

BFR90H Datasheet, Equivalent, Cross Reference Search


   Type Designator: BFR90H
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2500 MHz
   Collector Capacitance (Cc): 0.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO51

 BFR90H Transistor Equivalent Substitute - Cross-Reference Search

   

BFR90H Datasheet (PDF)

 9.1. Size:76K  motorola
 bfr90rev.pdf

BFR90H BFR90H

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BFR90/DThe RF LineNPN SiliconBFR90High-Frequency TransistorDesigned primarily for use in highgain, lownoise, smallsignal amplifiers.Also used in applications requiring fast switching times. High CurrentGain Bandwidth Product fT = 5.0 GHz (Typ) @ IC = 14 mAfT = 5.0 GHz @ 14 mA Low Noise F

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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