BFR90H Specs and Replacement

Type Designator: BFR90H

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.025 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 2500 MHz

Collector Capacitance (Cc): 0.8 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO51

 BFR90H Substitution

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BFR90H datasheet

 9.1. Size:76K  motorola

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BFR90H

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BFR90/D The RF Line NPN Silicon BFR90 High-Frequency Transistor Designed primarily for use in high gain, low noise, small signal amplifiers. Also used in applications requiring fast switching times. High Current Gain Bandwidth Product fT = 5.0 GHz (Typ) @ IC = 14 mA fT = 5.0 GHz @ 14 mA Low Noise F... See More ⇒

Detailed specifications: BFR88TO5, BFR89, BFR89A, BFR89B, BFR89TO5, BFR90, BFR90A, BFR90B, A1013, BFR91, BFR91A, BFR91H, BFR92, BFR92A, BFR92ALT1, BFR92AR, BFR92L

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