BFR96H Specs and Replacement

Type Designator: BFR96H

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 5000 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO51

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BFR96H datasheet

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BFR96H

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BFR96/D The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state of the art microwave transistor chip which features fine line geometry, ion implanted arsenic emitters and gold top metallization. This transistor is intended for low to medium power amplifiers requiring hi... See More ⇒

Detailed specifications: BFR93ALT1, BFR93AR, BFR93L, BFR93P, BFR93R, BFR94, BFR95, BFR96, TIP142, BFR96S, BFR96T, BFR97, BFR98, BFR99, BFR99A, BFS10, BFS11

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