BFR96H Datasheet, Equivalent, Cross Reference Search
Type Designator: BFR96H
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 5000 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO51
BFR96H Transistor Equivalent Substitute - Cross-Reference Search
BFR96H Datasheet (PDF)
bfr96rev.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BFR96/DThe RF LineNPN SiliconHigh-Frequency TransistorBFR96The BFR96 transistor uses the same stateoftheart microwave transistorchip which features fineline geometry, ionimplanted arsenic emitters and goldtop metallization. This transistor is intended for lowtomedium power amplifiersrequiring hi
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .