BFR96T Datasheet and Replacement
Type Designator: BFR96T
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 5000 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO51
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BFR96T Datasheet (PDF)
bfr96rev.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BFR96/DThe RF LineNPN SiliconHigh-Frequency TransistorBFR96The BFR96 transistor uses the same stateoftheart microwave transistorchip which features fineline geometry, ionimplanted arsenic emitters and goldtop metallization. This transistor is intended for lowtomedium power amplifiersrequiring hi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: RT2P01M | BC856BDW1T3G | CTP1732 | DTA114TMFHA | 2SC3489 | CP502 | 2N2675
Keywords - BFR96T transistor datasheet
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History: RT2P01M | BC856BDW1T3G | CTP1732 | DTA114TMFHA | 2SC3489 | CP502 | 2N2675



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