All Transistors. 2N3055-3 Datasheet

 

2N3055-3 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N3055-3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 117 W
   Maximum Collector-Base Voltage |Vcb|: 110 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

 2N3055-3 Transistor Equivalent Substitute - Cross-Reference Search

   

2N3055-3 Datasheet (PDF)

 8.1. Size:422K  rca
2n3055.pdf

2N3055-3

 8.2. Size:235K  motorola
2n3055a mj2955a mj15015 mj15016.pdf

2N3055-3
2N3055-3

Order this documentMOTOROLAby 2N3055A/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon2N3055AHigh-Power Transistors*MJ15015. . . PowerBase complementary transistors designed

 8.3. Size:130K  motorola
2n3055.pdf

2N3055-3
2N3055-3

Order this documentMOTOROLAby 2N3055/DSEMICONDUCTOR TECHNICAL DATANPN2N3055 *Complementary Silicon Power PNPMJ2955*Transistors. . . designed for general purpose switching and amplif

 8.4. Size:179K  motorola
2n3055 mj2955.pdf

2N3055-3
2N3055-3

Order this documentMOTOROLAby 2N3055/DSEMICONDUCTOR TECHNICAL DATANPN2N3055 *Complementary Silicon Power PNPMJ2955*Transistors. . . designed for general purpose switching and amplif

 8.5. Size:130K  motorola
mj2955-2n3055.pdf

2N3055-3
2N3055-3

Order this documentMOTOROLAby 2N3055/DSEMICONDUCTOR TECHNICAL DATANPN2N3055 *Complementary Silicon Power PNPMJ2955*Transistors. . . designed for general purpose switching and amplif

 8.6. Size:39K  st
2n3055.pdf

2N3055-3
2N3055-3

2N3055SILICON NPN TRANSISTORn SGS-THOMSON PREFERRED SALESTYPEDESCRIPTIONThe 2N3055 is a silicon epitaxial-base NPNtransistor in Jedec TO-3 metal case. It is intendedfor power switching circuits, series and shuntregulators, output stages and high fidelityamplifiers.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base

 8.7. Size:90K  st
2n3055 mj2955 2.pdf

2N3055-3
2N3055-3

2N3055MJ2955Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier12DescriptionTO-3The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Figure 1. Internal schematic d

 8.8. Size:89K  onsemi
2n3055ag.pdf

2N3055-3
2N3055-3

2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc

 8.9. Size:181K  onsemi
2n3055ag mj15015g mj15016g.pdf

2N3055-3
2N3055-3

2N3055AG (NPN),MJ15015G (NPN),MJ15016G (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBase complementary transistors are designed for highpower audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orCOMPLEMENTARY SILICONsolenoid drivers, dc-to-dc converters, invert

 8.10. Size:89K  onsemi
2n3055a mj15015 mj15016.pdf

2N3055-3
2N3055-3

2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc

 8.11. Size:71K  onsemi
2n3055g.pdf

2N3055-3
2N3055-3

2N3055(NPN), MJ2955(PNP)Preferred Device Complementary SiliconPower TransistorsComplementary silicon power transistors are designed forgeneral-purpose switching and amplifier applications.Featureshttp://onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage -15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 AdcPOWER TRANSISTORS Exc

 8.12. Size:70K  onsemi
2n3055 mj2955.pdf

2N3055-3
2N3055-3

2N3055(NPN), MJ2955(PNP)Preferred Device Complementary SiliconPower TransistorsComplementary silicon power transistors are designed forgeneral-purpose switching and amplifier applications.Featureshttp://onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage -15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 AdcPOWER TRANSISTORS Exc

 8.13. Size:16K  utc
2n3055.pdf

2N3055-3
2N3055-3

UTC 2N3055 SILICON NPN TRANSISTORSILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3metal case. It is intended for power switching circuits,series and shunt regulators, output stages and high fidelityamplifiers.TO-3ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETERS SYMBOL VALUE UNITSCollector-Base Voltage VCBO 100 VCollector-Em

 8.14. Size:193K  mospec
mj15015-16 2n3055a mj2955a.pdf

2N3055-3
2N3055-3

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 8.15. Size:10K  semelab
2n3055esmd.pdf

2N3055-3

2N3055ESMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 15A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26

 8.16. Size:240K  cdil
2n3055hv.pdf

2N3055-3
2N3055-3

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3055HVNPN POWER TRANSISTORTO-3Metal Can PackageSwitching Regulator and Power Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage ( Open Emitter) V100VCEOCollector Emitter Voltage (Open Base) V100VEBOEmitter Base Voltage V

 8.17. Size:330K  cdil
2n3055 mj2955.pdf

2N3055-3
2N3055-3

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3055 NPNSILICON PLANAR POWER TRANSISTORSMJ2955 PNPTO-3Metal Can PackageGeneral Purpose Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITSVALUECollector Base Voltage VCBO V100Collector Emitter Voltage VCEO V60Collector Emitter Voltage(RBE=100

 8.18. Size:237K  jmnic
2n3055.pdf

2N3055-3
2N3055-3

Product Specification www.jmnic.comSilicon NPN Power Transistors 2N3055 DESCRIPTION With TO-3 package Complement to type MJ2955 DC Current Gain -hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area APPLICATIONS Designed for generalpurpose switching and amplifier applications.

 8.19. Size:156K  aeroflex
2n3055.pdf

2N3055-3
2N3055-3

NPN Power Silicon Transistor2N3055Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/407 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol Value UnitsCollector - Emitter Voltage VCEO 70 VdcCollector - Base Voltage VCBO 100 VdcEmitter - Base Voltage VEBO 7.0 VdcBase Current IB 7.0 AdcCollector Current IC 15 AdcTotal Power Dissipation @ TA = 25 C (

 8.20. Size:613K  jsmsemi
2n3055.pdf

2N3055-3
2N3055-3

2N3055 Silicon NPN Power TransistorDESCRIPTION Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Complement to Type 2N2955 APPLICATIONSDesigned for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collecto

 8.21. Size:1835K  cn sps
2n3055t3bl.pdf

2N3055-3
2N3055-3

2N3055T3BLSilicon NPN Power TransistorDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to Type MJ2955APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

 8.22. Size:184K  cn sptech
2n3055.pdf

2N3055-3
2N3055-3

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2N3055DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to Type MJ2955APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 8.23. Size:228K  inchange semiconductor
2n3055b.pdf

2N3055-3
2N3055-3

isc Silicon NPN Power Transistor 2N3055BDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =70-140 @I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM

 8.24. Size:212K  inchange semiconductor
2n3055.pdf

2N3055-3
2N3055-3

isc Silicon NPN Power Transistor 2N3055DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to Type MJ2955Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierappli

 8.25. Size:33K  inchange semiconductor
2n3055a.pdf

2N3055-3
2N3055-3

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055A DESCRIPTION Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Complement to Type MJ2955A APPLICATIONS Designed for high power audio, stepping motor and other linear applications. It can also be

 8.26. Size:31K  inchange semiconductor
2n3055h.pdf

2N3055-3
2N3055-3

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055H DESCRIPTION Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS Designed for general-purpose switching and amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER

Datasheet: 2N3053SM , 2N3054 , 2N3054A , 2N3054S , 2N3055 , 2N3055-1 , 2N3055-10 , 2N3055-2 , MPSA42 , 2N3055-4 , 2N3055-5 , 2N3055-6 , 2N3055-7 , 2N3055-8 , 2N3055-9 , 2N3055A , 2N3055C .

 

 
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