2N3055C Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3055C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 117 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
2N3055C Transistor Equivalent Substitute - Cross-Reference Search
2N3055C Datasheet (PDF)
2n3055a mj2955a mj15015 mj15016.pdf
Order this documentMOTOROLAby 2N3055A/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon2N3055AHigh-Power Transistors*MJ15015. . . PowerBase complementary transistors designed for high power audio, steppingmotor and other linear applications. These devices can also be used in powerswitching circuits such as relay or solenoid drivers, dctodc converters, inverters
mj2955-2n3055.pdf
Order this documentMOTOROLAby 2N3055/DSEMICONDUCTOR TECHNICAL DATANPN2N3055 *Complementary Silicon Power PNPMJ2955*Transistors. . . designed for generalpurpose switching and amplifier applications.*Motorola Preferred Device DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage 15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc P
2n3055.pdf
Order this documentMOTOROLAby 2N3055/DSEMICONDUCTOR TECHNICAL DATANPN2N3055 *Complementary Silicon Power PNPMJ2955*Transistors. . . designed for generalpurpose switching and amplifier applications.*Motorola Preferred Device DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage 15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc P
2n3055 mj2955.pdf
Order this documentMOTOROLAby 2N3055/DSEMICONDUCTOR TECHNICAL DATANPN2N3055 *Complementary Silicon Power PNPMJ2955*Transistors. . . designed for generalpurpose switching and amplifier applications.*Motorola Preferred Device DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage 15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc P
2n3055.pdf
2N3055SILICON NPN TRANSISTORn SGS-THOMSON PREFERRED SALESTYPEDESCRIPTIONThe 2N3055 is a silicon epitaxial-base NPNtransistor in Jedec TO-3 metal case. It is intendedfor power switching circuits, series and shuntregulators, output stages and high fidelityamplifiers.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base
2n3055 mj2955 2.pdf
2N3055MJ2955Complementary power transistorsFeatures Low collector-emitter saturation voltage Complementary NPN - PNP transistorsApplications General purpose Audio Amplifier12DescriptionTO-3The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications.Figure 1. Internal schematic d
2n3055a mj15015 mj15016.pdf
2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc
2n3055g.pdf
2N3055(NPN), MJ2955(PNP)Preferred Device Complementary SiliconPower TransistorsComplementary silicon power transistors are designed forgeneral-purpose switching and amplifier applications.Featureshttp://onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage -15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 AdcPOWER TRANSISTORS Exc
2n3055ag.pdf
2N3055A (NPN),MJ15015 (NPN),MJ15016 (PNP)MJ15015 and MJ15016 are Preferred DevicesComplementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBaset complementary transistors are designed forhigh power audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orsolenoid drivers, dc-to-dc
2n3055ag mj15015g mj15016g.pdf
2N3055AG (NPN),MJ15015G (NPN),MJ15016G (PNP)Complementary SiliconHigh-Power Transistorshttp://onsemi.comThese PowerBase complementary transistors are designed for highpower audio, stepping motor and other linear applications. These15 AMPEREdevices can also be used in power switching circuits such as relay orCOMPLEMENTARY SILICONsolenoid drivers, dc-to-dc converters, invert
2n3055 mj2955.pdf
2N3055(NPN), MJ2955(PNP)Preferred Device Complementary SiliconPower TransistorsComplementary silicon power transistors are designed forgeneral-purpose switching and amplifier applications.Featureshttp://onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage -15 AMPEREVCE(sat) = 1.1 Vdc (Max) @ IC = 4 AdcPOWER TRANSISTORS Exc
2n3055.pdf
UTC 2N3055 SILICON NPN TRANSISTORSILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3metal case. It is intended for power switching circuits,series and shunt regulators, output stages and high fidelityamplifiers.TO-3ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETERS SYMBOL VALUE UNITSCollector-Base Voltage VCBO 100 VCollector-Em
2n3055esmd.pdf
2N3055ESMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 15A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26
2n3055hv.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3055HVNPN POWER TRANSISTORTO-3Metal Can PackageSwitching Regulator and Power Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage ( Open Emitter) V100VCEOCollector Emitter Voltage (Open Base) V100VEBOEmitter Base Voltage V
2n3055 mj2955.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3055 NPNSILICON PLANAR POWER TRANSISTORSMJ2955 PNPTO-3Metal Can PackageGeneral Purpose Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITSVALUECollector Base Voltage VCBO V100Collector Emitter Voltage VCEO V60Collector Emitter Voltage(RBE=100
2n3055.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2N3055 DESCRIPTION With TO-3 package Complement to type MJ2955 DC Current Gain -hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area APPLICATIONS Designed for generalpurpose switching and amplifier applications.
2n3055.pdf
NPN Power Silicon Transistor2N3055Features Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/407 TO-3 (TO-204AA) PackageMaximum RatingsRatings Symbol Value UnitsCollector - Emitter Voltage VCEO 70 VdcCollector - Base Voltage VCBO 100 VdcEmitter - Base Voltage VEBO 7.0 VdcBase Current IB 7.0 AdcCollector Current IC 15 AdcTotal Power Dissipation @ TA = 25 C (
2n3055.pdf
2N3055 Silicon NPN Power TransistorDESCRIPTION Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Complement to Type 2N2955 APPLICATIONSDesigned for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collecto
2n3055t3bl.pdf
2N3055T3BLSilicon NPN Power TransistorDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to Type MJ2955APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect
2n3055.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2N3055DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to Type MJ2955APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
2n3055a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055A DESCRIPTION Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Complement to Type MJ2955A APPLICATIONS Designed for high power audio, stepping motor and other linear applications. It can also be
2n3055.pdf
isc Silicon NPN Power Transistor 2N3055DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =20-70@I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CComplement to Type MJ2955Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierappli
2n3055h.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055H DESCRIPTION Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS Designed for general-purpose switching and amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
2n3055b.pdf
isc Silicon NPN Power Transistor 2N3055BDESCRIPTIONExcellent Safe Operating AreaDC Current Gain-h =70-140 @I = 4AFE CCollector-Emitter Saturation Voltage-: V )= 1.1 V(Max)@ I = 4ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM
Datasheet: 2N3055-3 , 2N3055-4 , 2N3055-5 , 2N3055-6 , 2N3055-7 , 2N3055-8 , 2N3055-9 , 2N3055A , 2SD2012 , 2N3055E , 2N3055ESM , 2N3055H , 2N3055S , 2N3055SD , 2N3055U , 2N3055V , 2N3056 .
