BFT29 Specs and Replacement
Type Designator: BFT29
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO18
BFT29 Substitution
- BJT ⓘ Cross-Reference Search
BFT29 datasheet
BFT29X Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTX... See More ⇒
Detailed specifications: BFT25, BFT25R, BFT26, BFT27, BFT28, BFT28A, BFT28B, BFT28C, SS8050, BFT30, BFT31, BFT32, BFT33, BFT34, BFT35, BFT35A, BFT36
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