BFT29 Datasheet and Replacement
Type Designator: BFT29
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO18
BFT29 Substitution
BFT29 Datasheet (PDF)
bft29x.pdf

BFT29XDimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar NPN Device. VCEO = 80V 0.48 (0.019)0.41 (0.016)dia.IC = 1A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTX
Datasheet: BFT25 , BFT25R , BFT26 , BFT27 , BFT28 , BFT28A , BFT28B , BFT28C , A1013 , BFT30 , BFT31 , BFT32 , BFT33 , BFT34 , BFT35 , BFT35A , BFT36 .
History: 2SD2539 | PN3251A | BD234 | 2N6275
Keywords - BFT29 transistor datasheet
BFT29 cross reference
BFT29 equivalent finder
BFT29 lookup
BFT29 substitution
BFT29 replacement
History: 2SD2539 | PN3251A | BD234 | 2N6275



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2n3904 transistor | 2sd424 | 2sc828 | 2n4125 | tip42c transistor | c1815 transistor datasheet | mj15003 | 2sa1015