BFT66E Specs and Replacement

Type Designator: BFT66E

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.26 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 180 °C

Electrical Characteristics

Transition Frequency (ft): 2000 MHz

Collector Capacitance (Cc): 1.2 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO72

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BFT66E datasheet

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Detailed specifications: BFT57, BFT58, BFT59, BFT60, BFT61, BFT62, BFT65, BFT66, TIP32C, BFT66S, BFT67, BFT69, BFT70, BFT71, BFT72, BFT73, BFT74

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