BFT66S Specs and Replacement
Type Designator: BFT66S
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.26 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 180 °C
Electrical Characteristics
Transition Frequency (ft): 2000 MHz
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO72
BFT66S Substitution
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BFT66S datasheet
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Detailed specifications: BFT58, BFT59, BFT60, BFT61, BFT62, BFT65, BFT66, BFT66E, MJE350, BFT67, BFT69, BFT70, BFT71, BFT72, BFT73, BFT74, BFT75
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