BFX33 Datasheet PDF and Equivalents Search

Type Designator: BFX33  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2.8 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 480 MHz

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO39