All Transistors. BFX34 Datasheet

 

BFX34 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BFX34
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.87 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 70 MHz
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO39

 BFX34 Transistor Equivalent Substitute - Cross-Reference Search

   

BFX34 Datasheet (PDF)

 ..1. Size:52K  philips
bfx34 cnv 2.pdf

BFX34
BFX34

DISCRETE SEMICONDUCTORSDATA SHEETM3D111BFX34NPN switching transistor1997 Apr 22Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistor BFX34FEATURES PINNING High current (max. 2 A)PIN DESCRIPTION Low voltage (max. 60 V).1 emitter2 baseAPPLICATIONS

 ..2. Size:50K  st
bfx34 2.pdf

BFX34
BFX34

BFX34SILICON NPN TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPNtransistor in Jedec TO-39 metal case, intented forhigh current applications.Very low saturation voltage and high speed athigh current levels make it ideal for power drivers,power amplifiers, switching power supplies andrelay drivers

 ..3. Size:66K  st
bfx34.pdf

BFX34
BFX34

BFX34SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon epitaxial planar NPNtransistor in Jedec TO-39 metal case, intented forhigh current applications.Very low saturation voltage and high speed athigh current levels make it ideal for power drivers,power amplifiers, switching power supplies andrelay drivers inverters.

 ..4. Size:87K  cdil
bfx34.pdf

BFX34
BFX34

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTOR BFX34TO-39NPN Transistor in a TO-39 Metal Envelope Primarily Intended For Use As High-Current Switching Device, e.g. Inverters And Switching Regulators.ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 120 VCollector -Emitte

 0.1. Size:10K  semelab
bfx34smd05.pdf

BFX34

BFX34SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herme

 0.2. Size:10K  semelab
bfx34smd.pdf

BFX34

BFX34SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0.

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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