BFX49G Datasheet and Replacement

   Type Designator: BFX49G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2.5 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 36 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 650 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO131
     - BJT ⓘ Cross-Reference Search