BFX57II Datasheet. Specs and Replacement

Type Designator: BFX57II  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 600 MHz

Collector Capacitance (Cc): 1 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: TO12

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BFX57II datasheet

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Detailed specifications: BFX53, BFX55, BFX56, BFX56I, BFX56II, BFX56III, BFX57, BFX57I, BD139, BFX57III, BFX58, BFX58D, BFX58I, BFX58II, BFX58III, BFX59, BFX59F

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