BFX58II Datasheet. Specs and Replacement

Type Designator: BFX58II  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2.6 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 600 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 90

Noise Figure, dB: -

Package: TO12

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BFX58II datasheet

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Detailed specifications: BFX56III, BFX57, BFX57I, BFX57II, BFX57III, BFX58, BFX58D, BFX58I, C1815, BFX58III, BFX59, BFX59F, BFX59R, BFX60, BFX61, BFX62, BFX65

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