BFX89 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFX89
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1100 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO72
BFX89 Transistor Equivalent Substitute - Cross-Reference Search
BFX89 Datasheet (PDF)
0.1. Size:140K comset
bfy90-bfx89.pdf
bfy90-bfx89.pdf
BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY LOW NOISE APPLICATIONS : TELECOMMUNICATIONS WIDE BAND UHF AMPLIFIER RADIO COMMUNICATIONSThe BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
