BFX89 Specs and Replacement
Type Designator: BFX89
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1100 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO72
BFX89 Substitution
- BJT ⓘ Cross-Reference Search
BFX89 datasheet
BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER SILICON PLANAR EPITAXIAL TRANSISTORS TO-72 METAL CASE VERY LOW NOISE APPLICATIONS TELECOMMUNICATIONS WIDE BAND UHF AMPLIFIER RADIO COMMUNICATIONS The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide ... See More ⇒
Detailed specifications: BFX81, BFX81DCSM, BFX81DCSMM, BFX84, BFX85, BFX86, BFX87, BFX88, B772, BFX90, BFX91, BFX92, BFX92A, BFX93, BFX93A, BFX94, BFX94A
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