2N3114S Datasheet and Replacement
Type Designator: 2N3114S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 9 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO5
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2N3114S Datasheet (PDF)
2n3114csm.pdf

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM High Voltage Hermetic Ceramic Surface Mount Package Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter V
Datasheet: 2N310 , 2N3107 , 2N3108 , 2N3109 , 2N311 , 2N3110 , 2N3110S , 2N3114 , MJE340 , 2N3115 , 2N3116 , 2N3117 , 2N3118 , 2N3119 , 2N312 , 2N3120 , 2N3121 .
History: 2N3867SM | 2N5154 | 2N5690 | 2N1669 | 2N185 | 2N3662 | 2N1221
Keywords - 2N3114S transistor datasheet
2N3114S cross reference
2N3114S equivalent finder
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History: 2N3867SM | 2N5154 | 2N5690 | 2N1669 | 2N185 | 2N3662 | 2N1221



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