BFY40 Specs and Replacement

Type Designator: BFY40

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO5

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BFY40 datasheet

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BFY40

BFY405 HiRel NPN Silicon RF Transistor HiRel Discrete and Microwave Semiconductor 4 3 For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz 12 Hermetically sealed microwave package Transition Frequency fT = 20 GHz mens rounded mitter ransistor- GHz fT- Space Qualifie... See More ⇒

Detailed specifications: BFY34, BFY37, BFY37I, BFY39, BFY39-1, BFY39-2, BFY39-3, BFY39I, TIP41C, BFY41, BFY42, BFY43, BFY44, BFY45, BFY46, BFY47, BFY47BK

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