All Transistors. BFY40 Datasheet

 

BFY40 Datasheet and Replacement


   Type Designator: BFY40
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO5
 

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BFY40 Datasheet (PDF)

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BFY40

BFY405HiRel NPN Silicon RF Transistor HiRel Discrete and Microwave Semiconductor4 3 For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHzOutstanding Gms = 23dB at 1.8 GHz12 Hermetically sealed microwave package Transition Frequency fT = 20 GHz mens rounded mitter ransistor- GHz fT- Space Qualifie

Datasheet: BFY34 , BFY37 , BFY37I , BFY39 , BFY39-1 , BFY39-2 , BFY39-3 , BFY39I , C945 , BFY41 , BFY42 , BFY43 , BFY44 , BFY45 , BFY46 , BFY47 , BFY47BK .

History: 2SA358 | 2SC2813Q4 | 2SC2813Q3 | SS8050-1.5A-C | PE5029 | ST8065 | 2SC2814

Keywords - BFY40 transistor datasheet

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