All Transistors. BFY40 Datasheet

 

BFY40 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BFY40
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO5

 BFY40 Transistor Equivalent Substitute - Cross-Reference Search

   

BFY40 Datasheet (PDF)

 0.1. Size:30K  siemens
 bfy405.pdf

BFY40 BFY40

BFY405HiRel NPN Silicon RF Transistor HiRel Discrete and Microwave Semiconductor4 3 For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHzOutstanding Gms = 23dB at 1.8 GHz12 Hermetically sealed microwave package Transition Frequency fT = 20 GHz mens rounded mitter ransistor- GHz fT- Space Qualifie

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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