BFY42 Specs and Replacement
Type Designator: BFY42
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Package: TO18
BFY42 Substitution
- BJT ⓘ Cross-Reference Search
BFY42 datasheet
BFY420 HiRel NPN Silicon RF Transistor HiRel Discrete and Microwave Semiconductor 4 3 For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz 12 Hermetically sealed microwave package Transition Frequency fT = 22 GHz mens rounded mitter ransistor- GHz fT- Space Qualif... See More ⇒
Detailed specifications: BFY37I, BFY39, BFY39-1, BFY39-2, BFY39-3, BFY39I, BFY40, BFY41, 2N3904, BFY43, BFY44, BFY45, BFY46, BFY47, BFY47BK, BFY47R, BFY48
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