BFY42 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFY42
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: TO18
BFY42 Transistor Equivalent Substitute - Cross-Reference Search
BFY42 Datasheet (PDF)
bfy420.pdf
BFY420HiRel NPN Silicon RF Transistor HiRel Discrete and Microwave Semiconductor4 3 For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHzOutstanding Gms = 21dB at 1.8 GHz12 Hermetically sealed microwave package Transition Frequency fT = 22 GHz mens rounded mitter ransistor- GHz fT- Space Qualif
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: BC107P | LBC550C | MPSA92