All Transistors. BFY51 Datasheet

 

BFY51 Datasheet and Replacement


   Type Designator: BFY51
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO5
 

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BFY51 Datasheet (PDF)

 ..1. Size:55K  philips
 bfy50 bfy51 bfy52 cnv 2.pdf pdf_icon

BFY51

DISCRETE SEMICONDUCTORSDATA SHEETM3D111BFY50; BFY51; BFY52NPN medium power transistors1997 Apr 22Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistors BFY50; BFY51; BFY52FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 35 V)

 ..2. Size:132K  cdil
 bfy50 bfy51 bfy52.pdf pdf_icon

BFY51

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52TO-39Metal Can PackageGeneral Purpose Transistors.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BFY50 BFY51 BFY52 UNITSVCEOCollector Emitter Voltage 35 30 20 VVCBOCollector Base Voltage 80 60 40 VVEBOE

Datasheet: BFY48R , BFY49 , BFY49R , BFY49RK , BFY50 , BFY50E , BFY50I , BFY50L , A1941 , BFY51I , BFY52 , BFY53 , BFY55 , BFY56 , BFY56A , BFY56B , BFY57 .

History: GES5306A

Keywords - BFY51 transistor datasheet

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