BFY51 Specs and Replacement
Type Designator: BFY51
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO5
BFY51 Substitution
- BJT ⓘ Cross-Reference Search
BFY51 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFY50; BFY51; BFY52 NPN medium power transistors 1997 Apr 22 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistors BFY50; BFY51; BFY52 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 35 V)... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL BFY50 BFY51 BFY52 UNITS VCEO Collector Emitter Voltage 35 30 20 V VCBO Collector Base Voltage 80 60 40 V VEBO E... See More ⇒
Detailed specifications: BFY48R, BFY49, BFY49R, BFY49RK, BFY50, BFY50E, BFY50I, BFY50L, D882, BFY51I, BFY52, BFY53, BFY55, BFY56, BFY56A, BFY56B, BFY57
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