All Transistors. BLT80 Datasheet

 

BLT80 Datasheet and Replacement


   Type Designator: BLT80
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Collector Current |Ic max|: 0.25 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT223
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BLT80 Datasheet (PDF)

 ..1. Size:82K  philips
 blt80.pdf pdf_icon

BLT80

DISCRETE SEMICONDUCTORSDATA SHEETBLT80UHF power transistor1996 May 09Product specificationSupersedes data of May 1992Philips Semiconductors Product specificationUHF power transistor BLT80FEATURES SMD encapsulation Gold metallization ensures excellent reliability.handbook, halfpage4APPLICATIONS Hand-held radio equipment in the 900 MHzccommunication ban

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BD536K | 16029 | GES5825 | KT686G | CDQ10036 | BD648 | 2SC1557

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