BLT80 Specs and Replacement
Type Designator: BLT80
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Collector Current |Ic max|: 0.25 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 25
Package: SOT223
BLT80 Substitution
- BJT ⓘ Cross-Reference Search
BLT80 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor 1996 May 09 Product specification Supersedes data of May 1992 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES SMD encapsulation Gold metallization ensures excellent reliability. handbook, halfpage 4 APPLICATIONS Hand-held radio equipment in the 900 MHz c communication ban... See More ⇒
Detailed specifications: BFY92, BFY94, BFY95, BFY99, BFYP99, BFZ10, BJ1A, BLT50, BD333, BLT90, BLT90-SL, BLT91, BLT91-SL, BLT92, BLT92-SL, BLT93-SL, BLU10-12
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