BLT80 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLT80
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Collector Current |Ic max|: 0.25 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT223
BLT80 Transistor Equivalent Substitute - Cross-Reference Search
BLT80 Datasheet (PDF)
..1. Size:82K philips
blt80.pdf
blt80.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLT80UHF power transistor1996 May 09Product specificationSupersedes data of May 1992Philips Semiconductors Product specificationUHF power transistor BLT80FEATURES SMD encapsulation Gold metallization ensures excellent reliability.handbook, halfpage4APPLICATIONS Hand-held radio equipment in the 900 MHzccommunication ban
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
