BLV33 Datasheet and Replacement
Type Designator: BLV33
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 132 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 33 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 700 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO128
BLV33 Substitution
BLV33 Datasheet (PDF)
blv33.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLV33VHF linear power transistor1996 Oct 10Product specificationSupersedes data of November 1995Philips Semiconductors Product specificationVHF linear power transistor BLV33FEATURES PINNING - SOT147 Diffused emitter ballasting resistors for an optimumPIN SYMBOL DESCRIPTIONtemperature profile1 c collector Gold sandwich metalliza
blv33f.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLV33FVHF linear power transistor1996 Oct 10Product specificationPhilips Semiconductors Product specificationVHF linear power transistor BLV33FFEATURES PINNING - SOT119A Internally matched input for wideband operation andPIN SYMBOL DESCRIPTIONhigh power gain1 e emitter Diffused emitter ballasting resistors for an optimum2 e emi
Datasheet: BLV20 , BLV21 , BLV25 , BLV30 , BLV30-12 , BLV31 , BLV32 , BLV32F , S8050 , BLV33F , BLV34 , BLV34F , BLV36 , BLV37 , BLV45 , BLV45-12 , BLV45A .
History: SGSF664 | BD647F | BF249-2 | MP110 | BCW58B | NSVBC846BM3T5G | 2SD1236
Keywords - BLV33 transistor datasheet
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History: SGSF664 | BD647F | BF249-2 | MP110 | BCW58B | NSVBC846BM3T5G | 2SD1236



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