BLV33 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV33
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 132 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 33 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 700 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO128
BLV33 Transistor Equivalent Substitute - Cross-Reference Search
BLV33 Datasheet (PDF)
blv33.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV33VHF linear power transistor1996 Oct 10Product specificationSupersedes data of November 1995Philips Semiconductors Product specificationVHF linear power transistor BLV33FEATURES PINNING - SOT147 Diffused emitter ballasting resistors for an optimumPIN SYMBOL DESCRIPTIONtemperature profile1 c collector Gold sandwich metalliza
blv33f.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV33FVHF linear power transistor1996 Oct 10Product specificationPhilips Semiconductors Product specificationVHF linear power transistor BLV33FFEATURES PINNING - SOT119A Internally matched input for wideband operation andPIN SYMBOL DESCRIPTIONhigh power gain1 e emitter Diffused emitter ballasting resistors for an optimum2 e emi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
