BLV33 Specs and Replacement
Type Designator: BLV33
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 132 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 33 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 700 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO128
BLV33 Substitution
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BLV33 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLV33 VHF linear power transistor 1996 Oct 10 Product specification Supersedes data of November 1995 Philips Semiconductors Product specification VHF linear power transistor BLV33 FEATURES PINNING - SOT147 Diffused emitter ballasting resistors for an optimum PIN SYMBOL DESCRIPTION temperature profile 1 c collector Gold sandwich metalliza... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BLV33F VHF linear power transistor 1996 Oct 10 Product specification Philips Semiconductors Product specification VHF linear power transistor BLV33F FEATURES PINNING - SOT119A Internally matched input for wideband operation and PIN SYMBOL DESCRIPTION high power gain 1 e emitter Diffused emitter ballasting resistors for an optimum 2 e emi... See More ⇒
Detailed specifications: BLV20, BLV21, BLV25, BLV30, BLV30-12, BLV31, BLV32, BLV32F, 13003, BLV33F, BLV34, BLV34F, BLV36, BLV37, BLV45, BLV45-12, BLV45A
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