BLV45-12 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV45-12
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Emitter Voltage |Vce|: 36 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 9 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: M111
BLV45-12 Transistor Equivalent Substitute - Cross-Reference Search
BLV45-12 Datasheet (PDF)
blv4512 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV45/12VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV45/12DESCRIPTION FEATURESN-P-N silicon planar epitaxial multi-base structure andtransistor primarily intended for use in emitter-ballasting resistors for anmobile radio transmitters in the optimum temperature
blv45.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV45/12VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV45/12DESCRIPTION FEATURESN-P-N silicon planar epitaxial multi-base structure andtransistor primarily intended for use in emitter-ballasting resistors for anmobile radio transmitters in the optimum temperature
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
