All Transistors. BLV45-12 Datasheet

 

BLV45-12 Datasheet and Replacement


   Type Designator: BLV45-12
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Emitter Voltage |Vce|: 36 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 9 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 175 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: M111
 

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BLV45-12 Datasheet (PDF)

 9.1. Size:64K  philips
 blv4512 cnv 2.pdf pdf_icon

BLV45-12

DISCRETE SEMICONDUCTORSDATA SHEETBLV45/12VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV45/12DESCRIPTION FEATURESN-P-N silicon planar epitaxial multi-base structure andtransistor primarily intended for use in emitter-ballasting resistors for anmobile radio transmitters in the optimum temperature

 9.2. Size:64K  philips
 blv45.pdf pdf_icon

BLV45-12

DISCRETE SEMICONDUCTORSDATA SHEETBLV45/12VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV45/12DESCRIPTION FEATURESN-P-N silicon planar epitaxial multi-base structure andtransistor primarily intended for use in emitter-ballasting resistors for anmobile radio transmitters in the optimum temperature

Datasheet: BLV32F , BLV33 , BLV33F , BLV34 , BLV34F , BLV36 , BLV37 , BLV45 , MJE340 , BLV45A , BLV57 , BLV59 , BLV75-12 , BLV80-28 , BLV90 , BLV90-SL , BLV91 .

History: TN4356 | 2SC784O | SD1893 | HD1A3M | BDB06 | DAT2 | RN2503

Keywords - BLV45-12 transistor datasheet

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