BLV45-12 Specs and Replacement

Type Designator: BLV45-12

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Emitter Voltage |Vce|: 36 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 9 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 175 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: M111

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BLV45-12 datasheet

 9.1. Size:64K  philips

 blv4512 cnv 2.pdf pdf_icon

BLV45-12

DISCRETE SEMICONDUCTORS DATA SHEET BLV45/12 VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLV45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial multi-base structure and transistor primarily intended for use in emitter-ballasting resistors for an mobile radio transmitters in the optimum temperature ... See More ⇒

 9.2. Size:64K  philips

 blv45.pdf pdf_icon

BLV45-12

DISCRETE SEMICONDUCTORS DATA SHEET BLV45/12 VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLV45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial multi-base structure and transistor primarily intended for use in emitter-ballasting resistors for an mobile radio transmitters in the optimum temperature ... See More ⇒

Detailed specifications: BLV32F, BLV33, BLV33F, BLV34, BLV34F, BLV36, BLV37, BLV45, 2SC4793, BLV45A, BLV57, BLV59, BLV75-12, BLV80-28, BLV90, BLV90-SL, BLV91

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