BLV57 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV57
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 77 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 27 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 2500 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: SPECIAL
BLV57 Transistor Equivalent Substitute - Cross-Reference Search
BLV57 Datasheet (PDF)
blv57.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV57UHF linear push-pull powertransistor1998 Feb 09Product specificationSupersedes data of August 1986Philips Semiconductors Product specificationUHF linear push-pull power transistor BLV57FEATURES PINNING - SOT161A internally matched input for wideband operation andPIN SYMBOL DESCRIPTIONhigh power gain1 e emitter internal m
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