BLV57 Specs and Replacement

Type Designator: BLV57

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 77 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 27 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 2500 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: SPECIAL

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BLV57 datasheet

 ..1. Size:121K  philips

 blv57.pdf pdf_icon

BLV57

DISCRETE SEMICONDUCTORS DATA SHEET BLV57 UHF linear push-pull power transistor 1998 Feb 09 Product specification Supersedes data of August 1986 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV57 FEATURES PINNING - SOT161A internally matched input for wideband operation and PIN SYMBOL DESCRIPTION high power gain 1 e emitter internal m... See More ⇒

Detailed specifications: BLV33F, BLV34, BLV34F, BLV36, BLV37, BLV45, BLV45-12, BLV45A, 2SC1815, BLV59, BLV75-12, BLV80-28, BLV90, BLV90-SL, BLV91, BLV91-SL, BLV92

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