All Transistors. BLV90 Datasheet

 

BLV90 Datasheet and Replacement


   Type Designator: BLV90
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 900 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO128
 

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BLV90 Datasheet (PDF)

 ..1. Size:54K  philips
 blv90.pdf pdf_icon

BLV90

DISCRETE SEMICONDUCTORSDATA SHEETBLV90UHF power transistorFebruary 1996Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV90DESCRIPTION FEATURESNPN silicon planar epitaxial transistor designed for use in diffused emitter-ballasting resistors for an optimummobile radio transmitters in the 900 MHz band. temperature profile. gold

 0.1. Size:99K  philips
 blv909.pdf pdf_icon

BLV90

DISCRETE SEMICONDUCTORSDATA SHEETM3D175BLV909UHF power transistor1999 Jun 25Product specificationSupersedes data of 1996 Nov 04Philips Semiconductors Product specificationUHF power transistor BLV909FEATURES PINNING - SOT409B Emitter ballasting resistors for optimum temperaturePIN SYMBOL DESCRIPTIONprofile1, 4, 5, 8 e emitter Gold metallization ensures excell

 0.2. Size:105K  philips
 blv904.pdf pdf_icon

BLV90

DISCRETE SEMICONDUCTORSDATA SHEETBLV904UHF power transistor1997 Jul 15Product specificationSupersedes data of 1996 Feb 08Philips Semiconductors Product specificationUHF power transistor BLV904FEATURES PINNING - SOT409B Emitter ballasting resistors for optimumPIN DESCRIPTIONtemperature profile1, 4, 5, 8 emitter Gold metallization ensures excellent reliability

Datasheet: BLV37 , BLV45 , BLV45-12 , BLV45A , BLV57 , BLV59 , BLV75-12 , BLV80-28 , BC546 , BLV90-SL , BLV91 , BLV91-SL , BLV92 , BLV93 , BLV94 , BLV95 , BLV97 .

History: BLV75-12 | RN1110ACT | P216A | 2SC1242A | DTC709 | MP505 | BDW74A

Keywords - BLV90 transistor datasheet

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