BLV98 Datasheet and Replacement
Type Designator: BLV98
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 14 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 900 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: M118
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BLV98 Datasheet (PDF)
blv98ce.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLV98CEUHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV98CEFEATURES DESCRIPTION Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in an SOT-171envelope, intended for common emitter, class-AB Implanted ballasting resistors a
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: KSA1241O | DRA3143Y | CS9011I | KSA643Y | LDTA115EET1G | KRC846T | PHPT60406NY
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History: KSA1241O | DRA3143Y | CS9011I | KSA643Y | LDTA115EET1G | KRC846T | PHPT60406NY



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