BLV98 Specs and Replacement

Type Designator: BLV98

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 14 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 900 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: M118

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BLV98 datasheet

 0.1. Size:62K  philips

 blv98ce.pdf pdf_icon

BLV98

DISCRETE SEMICONDUCTORS DATA SHEET BLV98CE UHF power transistor March 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV98CE FEATURES DESCRIPTION Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in an SOT-171 envelope, intended for common emitter, class-AB Implanted ballasting resistors a... See More ⇒

Detailed specifications: BLV90-SL, BLV91, BLV91-SL, BLV92, BLV93, BLV94, BLV95, BLV97, 2SD2499, BLV99, BLW10, BLW11, BLW12, BLW13, BLW14, BLW15, BLW16

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