BLV99 Specs and Replacement

Type Designator: BLV99

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 900 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO128

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BLV99 datasheet

 ..1. Size:58K  philips

 blv99 99-sl cnv 2.pdf pdf_icon

BLV99

DISCRETE SEMICONDUCTORS DATA SHEET BLV99/SL UHF power transistor September 1991 Product specification Philips Semiconductors Product specification UHF power transistor BLV99/SL FEATURES PIN CONFIGURATION Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. halfpage 1 c DESCRIPTION handbook, halfpage 2 3 NPN... See More ⇒

Detailed specifications: BLV91, BLV91-SL, BLV92, BLV93, BLV94, BLV95, BLV97, BLV98, 2SC2625, BLW10, BLW11, BLW12, BLW13, BLW14, BLW15, BLW16, BLW17

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