BLW76 Specs and Replacement

Type Designator: BLW76

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 140 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 250 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: M174

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BLW76 datasheet

 ..1. Size:90K  philips

 blw76.pdf pdf_icon

BLW76

DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor August 1986 Product specification Philips Semiconductors Product specification HF/VHF power transistor BLW76 mismatch conditions. Transistors are DESCRIPTION delivered in matched hFE groups. N-P-N silicon planar epitaxial 1 The transistor has a 2" flange transistor intended for use in class-AB envelope with a ce... See More ⇒

Detailed specifications: BLW67, BLW68, BLW69, BLW70, BLW71, BLW72, BLW73, BLW75, 2N3904, BLW77, BLW78, BLW79, BLW80, BLW81, BLW82, BLW83, BLW84

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