BLW78 Specs and Replacement

Type Designator: BLW78

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 135 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 170 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: M174

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BLW78 datasheet

 ..1. Size:83K  philips

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BLW78

DISCRETE SEMICONDUCTORS DATA SHEET BLW78 HF/VHF power transistor August 1986 Product specification Philips Semiconductors Product specification HF/VHF power transistor BLW78 1 It has a 2" flange envelope with a DESCRIPTION ceramic cap. All leads are isolated N-P-N silicon planar epitaxial from the flange. transistor intended for use in class-A, AB or B operated mobile, indust... See More ⇒

Detailed specifications: BLW69, BLW70, BLW71, BLW72, BLW73, BLW75, BLW76, BLW77, 2N5551, BLW79, BLW80, BLW81, BLW82, BLW83, BLW84, BLW85, BLW86

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