BLW89 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLW89
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 9.6 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.32 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1200 MHz
Collector Capacitance (Cc): 11 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO131
BLW89 Transistor Equivalent Substitute - Cross-Reference Search
BLW89 Datasheet (PDF)
0.1. Size:81K philips
blw898.pdf
blw898.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLW898UHF linear power transistor1996 Jul 16Product specificationSupersedes data of 1995 Oct 04Philips Semiconductors Product specificationUHF linear power transistor BLW898FEATURES PINNING SOT171A Internal input matching for wideband operation and highPIN DESCRIPTIONpower gain1 emitter Polysilicon emitter ballasting resistors
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
