BLW89 Specs and Replacement

Type Designator: BLW89

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 9.6 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.32 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1200 MHz

Collector Capacitance (Cc): 11 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO131

 BLW89 Substitution

- BJT ⓘ Cross-Reference Search

 

BLW89 datasheet

 0.1. Size:81K  philips

 blw898.pdf pdf_icon

BLW89

DISCRETE SEMICONDUCTORS DATA SHEET BLW898 UHF linear power transistor 1996 Jul 16 Product specification Supersedes data of 1995 Oct 04 Philips Semiconductors Product specification UHF linear power transistor BLW898 FEATURES PINNING SOT171A Internal input matching for wideband operation and high PIN DESCRIPTION power gain 1 emitter Polysilicon emitter ballasting resistors ... See More ⇒

Detailed specifications: BLW80, BLW81, BLW82, BLW83, BLW84, BLW85, BLW86, BLW87, 2SA1943, BLW90, BLW91, BLW92, BLW93, BLW94, BLW95, BLW96, BLW98

Keywords - BLW89 pdf specs

 BLW89 cross reference

 BLW89 equivalent finder

 BLW89 pdf lookup

 BLW89 substitution

 BLW89 replacement