All Transistors. BLW89 Datasheet

 

BLW89 Datasheet and Replacement


   Type Designator: BLW89
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 9.6 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.32 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1200 MHz
   Collector Capacitance (Cc): 11 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO131
 

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BLW89 Datasheet (PDF)

 0.1. Size:81K  philips
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BLW89

DISCRETE SEMICONDUCTORSDATA SHEETBLW898UHF linear power transistor1996 Jul 16Product specificationSupersedes data of 1995 Oct 04Philips Semiconductors Product specificationUHF linear power transistor BLW898FEATURES PINNING SOT171A Internal input matching for wideband operation and highPIN DESCRIPTIONpower gain1 emitter Polysilicon emitter ballasting resistors

Datasheet: BLW80 , BLW81 , BLW82 , BLW83 , BLW84 , BLW85 , BLW86 , BLW87 , BC337 , BLW90 , BLW91 , BLW92 , BLW93 , BLW94 , BLW95 , BLW96 , BLW98 .

History: 2SD2589P

Keywords - BLW89 transistor datasheet

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