2N3149 Specs and Replacement
Type Designator: 2N3149
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 70 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO61
2N3149 Substitution
- BJT ⓘ Cross-Reference Search
2N3149 datasheet
Detailed specifications: 2N3141, 2N3142, 2N3143, 2N3144, 2N3145, 2N3146, 2N3147, 2N3148, BC549, 2N315, 2N3150, 2N3151, 2N3152, 2N3153, 2N3154, 2N3155, 2N3156
Keywords - 2N3149 pdf specs
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