BLY88 Specs and Replacement

Type Designator: BLY88

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 29 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 2.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 400 MHz

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO61

 BLY88 Substitution

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BLY88 datasheet

 0.1. Size:63K  philips

 bly88c cnv 2.pdf pdf_icon

BLY88

DISCRETE SEMICONDUCTORS DATA SHEET BLY88C VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLY88C It has a 3/8" capstan envelope with a DESCRIPTION ceramic cap. All leads are isolated N-P-N silicon planar epitaxial from the stud. transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f... See More ⇒

Detailed specifications: BLY82, BLY83, BLY84, BLY85, BLY86, BLY87, BLY87A, BLY87C, A42, BLY88A, BLY88C, BLY88T, BLY89, BLY89A, BLY89C, BLY90, BLY91

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