BLY88T Datasheet, Equivalent, Cross Reference Search
Type Designator: BLY88T
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 29 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 350 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: M162
BLY88T Transistor Equivalent Substitute - Cross-Reference Search
BLY88T Datasheet (PDF)
9.1. Size:63K philips
bly88c cnv 2.pdf
bly88c cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLY88CVHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLY88CIt has a 3/8" capstan envelope with aDESCRIPTIONceramic cap. All leads are isolatedN-P-N silicon planar epitaxialfrom the stud.transistor intended for use in class-A,B and C operated mobile, h.f. andv.h.f
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: DMC96101
