BLY88T Specs and Replacement
Type Designator: BLY88T
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 29 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 350 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Package: M162
BLY88T Substitution
- BJT ⓘ Cross-Reference Search
BLY88T datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLY88C VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLY88C It has a 3/8" capstan envelope with a DESCRIPTION ceramic cap. All leads are isolated N-P-N silicon planar epitaxial from the stud. transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f... See More ⇒
Detailed specifications: BLY85, BLY86, BLY87, BLY87A, BLY87C, BLY88, BLY88A, BLY88C, BDT88, BLY89, BLY89A, BLY89C, BLY90, BLY91, BLY91A, BLY91C, BLY92
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