All Transistors. BLY88T Datasheet

 

BLY88T Datasheet and Replacement


   Type Designator: BLY88T
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 29 W
   Maximum Collector-Base Voltage |Vcb|: 18 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 350 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: M162
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BLY88T Datasheet (PDF)

 9.1. Size:63K  philips
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BLY88T

DISCRETE SEMICONDUCTORSDATA SHEETBLY88CVHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLY88CIt has a 3/8" capstan envelope with aDESCRIPTIONceramic cap. All leads are isolatedN-P-N silicon planar epitaxialfrom the stud.transistor intended for use in class-A,B and C operated mobile, h.f. andv.h.f

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KSA1241O | KSA1150R | LDTA115EET1G | KSA643Y | PHPT60406NY | PEMD3 | CS9011I

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