BLY89A Datasheet, Equivalent, Cross Reference Search
Type Designator: BLY89A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 650 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO61
BLY89A Transistor Equivalent Substitute - Cross-Reference Search
BLY89A Datasheet (PDF)
bly89c cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLY89CVHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLY89CDESCRIPTIONN-P-N silicon planar epitaxialtransistor intended for use in class-A,B and C operated mobile, industrialand military transmitters with anominal supply voltage of 13,5 V. Thetransistor is resistan
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2T633A | 2N4116 | 2N2225