All Transistors. BLY89A Datasheet

 

BLY89A Datasheet and Replacement


   Type Designator: BLY89A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 650 MHz
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO61
 

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BLY89A Datasheet (PDF)

 9.1. Size:68K  philips
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BLY89A

DISCRETE SEMICONDUCTORSDATA SHEETBLY89CVHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLY89CDESCRIPTIONN-P-N silicon planar epitaxialtransistor intended for use in class-A,B and C operated mobile, industrialand military transmitters with anominal supply voltage of 13,5 V. Thetransistor is resistan

Datasheet: BLY87 , BLY87A , BLY87C , BLY88 , BLY88A , BLY88C , BLY88T , BLY89 , TIP41C , BLY89C , BLY90 , BLY91 , BLY91A , BLY91C , BLY92 , BLY92A , BLY92C .

History: 2SA562TM | MP2137 | ECG364 | 2N5831 | MP1557 | K159NT1V | 3N117

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