BSR12R Specs and Replacement
Type Designator: BSR12R
SMD Transistor Code: B8_B81
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1500 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SOT23
BSR12R Substitution
- BJT ⓘ Cross-Reference Search
BSR12R datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR12 PNP switching transistor Product specification 1999 Jul 23 Philips Semiconductors Product specification PNP switching transistor BSR12 FEATURES Low current (max. 100 mA) handbook, halfpage 3 Low voltage (max. 15 V). 3 1 APPLICATIONS High-speed, saturated switching applications for 2 industrial service... See More ⇒
Detailed specifications: BSP52T1, BSP52T3, BSP60, BSP61, BSP62, BSP62T1, BSP62T3, BSR12, TIP120, BSR13, BSR13R, BSR14, BSR14R, BSR15, BSR15R, BSR16, BSR16R
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