BSR62 Specs and Replacement
Type Designator: BSR62
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN: 4000
Package: TO92
BSR62 Substitution
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BSR62 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BSR62 PNP Darlington transistor 1999 Apr 26 Product specification Supersedes data of 1997 Apr 22 Philips Semiconductors Product specification PNP Darlington transistor BSR62 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V) 1 base Integrated diode and resistor. 2 collector 3 em... See More ⇒
Detailed specifications: BSR43, BSR50, BSR51, BSR52, BSR55, BSR59, BSR60, BSR61, 2N2222A, BSS10, BSS11, BSS12, BSS13, BSS14, BSS15, BSS16, BSS17
Keywords - BSR62 pdf specs
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History: 2SB1362
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