BSS44 Datasheet, Equivalent, Cross Reference Search
Type Designator: BSS44
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO39
BSS44 Transistor Equivalent Substitute - Cross-Reference Search
BSS44 Datasheet (PDF)
bss44.pdf
BSS44SILICON PNP TRANSISTOR STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTORDESCRIPTION The BSS44 is a silicon epitaxial planar PNPtransistor in Jedec TO-39 metal case. It is usedfor high-current switching and power applicationsup to 5 A.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Base Voltage (I = 0) - 65 V
pbss4480x.pdf
DISCRETE SEMICONDUCTORS DATA SHEETbook, halfpageM3D109PBSS4480X80 V, 4 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Oct 25Supersedes data of 2004 Aug 5NXP Semiconductors Product data sheet80 V, 4 A PBSS4480XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operationSYMBOL PARAMETER MAX. UNIT
pbss4480x.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss4440d.pdf
PBSS4440D40 V NPN low VCEsat (BISS) transistorRev. 01 21 April 2005 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74)SMD plastic package.PNP complement: PBSS5440D.1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC (DC)
pbss4420d.pdf
PBSS4420D20 V, 4 A NPN low VCEsat (BISS) transistorRev. 02 24 September 2008 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a smallSOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS5420D.1.2 Features Very low collector-emitter saturation resistance Ultra low collect
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
