BSS45 Datasheet and Replacement

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087PBSS4540ZNPN medium power transistorPreliminary specification 1999 Aug 04Philips Semiconductors Preliminary specificationNPN medium power transistor PBSS4540ZFEATURES PINNING High current (max. 10 A)PIN DESCRIPTION Low voltage (max. 40 V)1 base Low VCEsat.2 collector3 emitterAPPLICATIONS4 coll

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS4540X40 V, 5 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2004 Jun 11NXP Semiconductors Product data sheet40 V, 5 A PBSS4540XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operationSYMBOL PARAMETER MAX. UNIT

DISCRETE SEMICONDUCTORS DATA SHEETbook, halfpageM3D109PBSS4520X20 V, 5 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Nov 08Supersedes data of 2004 Jun 11NXP Semiconductors Product data sheet20 V, 5 A PBSS4520XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operationSYMBOL PARAMETER MAX. UNIT

PBSS4580PA80 V, 5.6 A NPN low VCEsat (BISS) transistorRev. 01 15 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.PNP complement: PBSS5580PA.1.2 Features and benefi

DISCRETE SEMICONDUCTORS DATA SHEETfpageM3D087PBSS4540Z40 V low VCEsat NPN transistorProduct data sheet 2001 Nov 14Supersedes data of 2001 Jul 24NXP Semiconductors Product data sheet40 V low VCEsat NPN transistorPBSS4540ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX UNIT High current capabilitiesVCEO emitter-colle

PBSS4560PA60 V, 6 A NPN low VCEsat (BISS) transistorRev. 1 19 May 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.PNP complement: PBSS5560PA.1.2 Features and benefits

PBSS4540X40 V, 5 A NPN low VCEsat (BISS) transistor15 April 2020 Product data sheet1. General descriptionNPN low VCEsat transistor in a medium power SOT89 (SC-62) package.PNP complement: PBSS5540X.2. Features and benefits High hFE and low VCEsat at high current operation High collector current capability: IC maximum 4 A High efficiency leading to less heat generation.

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain