BSS45 PDF and Equivalents Search

 

BSS45 Specs and Replacement

Type Designator: BSS45

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.87 W

Maximum Collector-Base Voltage |Vcb|: 85 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 120 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO39

 BSS45 Substitution

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BSS45 datasheet

 0.1. Size:49K  philips

pbss4540z 1.pdf pdf_icon

BSS45

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS4540Z NPN medium power transistor Preliminary specification 1999 Aug 04 Philips Semiconductors Preliminary specification NPN medium power transistor PBSS4540Z FEATURES PINNING High current (max. 10 A) PIN DESCRIPTION Low voltage (max. 40 V) 1 base Low VCEsat. 2 collector 3 emitter APPLICATIONS 4 coll... See More ⇒

 0.2. Size:199K  philips

pbss4540x.pdf pdf_icon

BSS45

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 0.3. Size:199K  philips

pbss4520x.pdf pdf_icon

BSS45

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 0.4. Size:168K  philips

pbss4580pa.pdf pdf_icon

BSS45

PBSS4580PA 80 V, 5.6 A NPN low VCEsat (BISS) transistor Rev. 01 15 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5580PA. 1.2 Features and benefi... See More ⇒

Detailed specifications: BSS37, BSS38, BSS39, BSS40, BSS41, BSS42, BSS43, BSS44, D880, BSS46, BSS47, BSS48, BSS49, BSS50, BSS51, BSS52, BSS53

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