BSS50 Specs and Replacement
Type Designator: BSS50
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO5-1
BSS50 Substitution
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BSS50 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSS50; BSS51; BSS52 NPN Darlington transistors 1997 Sep 03 Product specification Supersedes data of 1997 May 13 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN Darlington transistors BSS50; BSS51; BSS52 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V) 1 emi... See More ⇒
NPN BSS50A-51A-52A SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS They are NPN transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . PNP complements are the BSS60A 61A 62A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Val... See More ⇒
Detailed specifications: BSS42, BSS43, BSS44, BSS45, BSS46, BSS47, BSS48, BSS49, 2SC5198, BSS51, BSS52, BSS53, BSS53A, BSS53B, BSS54, BSS54A, BSS54B
Keywords - BSS50 pdf specs
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History: 2SA1211 | BSS82B | DSA9402 | BD149-6 | BSS70 | 2SA1048LY | ECG356
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