All Transistors. BSS50 Datasheet

 

BSS50 Datasheet and Replacement


   Type Designator: BSS50
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO5-1
 

 BSS50 Substitution

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BSS50 Datasheet (PDF)

 ..1. Size:52K  philips
 bss50 bss51 bss52 3.pdf pdf_icon

BSS50

DISCRETE SEMICONDUCTORSDATA SHEETM3D111BSS50; BSS51; BSS52NPN Darlington transistors1997 Sep 03Product specificationSupersedes data of 1997 May 13File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN Darlington transistors BSS50; BSS51; BSS52FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V)1 emi

 0.1. Size:62K  comset
 bss50a bss51a bss52a.pdf pdf_icon

BSS50

NPN BSS50A-51A-52A SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS They are NPN transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . PNP complements are the BSS60A 61A 62A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Val

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD1749

Keywords - BSS50 transistor datasheet

 BSS50 cross reference
 BSS50 equivalent finder
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