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BSS50 Specs and Replacement

Type Designator: BSS50

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO5-1

 BSS50 Substitution

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BSS50 datasheet

 ..1. Size:52K  philips

bss50 bss51 bss52 3.pdf pdf_icon

BSS50

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSS50; BSS51; BSS52 NPN Darlington transistors 1997 Sep 03 Product specification Supersedes data of 1997 May 13 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN Darlington transistors BSS50; BSS51; BSS52 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V) 1 emi... See More ⇒

 0.1. Size:62K  comset

bss50a bss51a bss52a.pdf pdf_icon

BSS50

NPN BSS50A-51A-52A SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS They are NPN transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . PNP complements are the BSS60A 61A 62A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Val... See More ⇒

Detailed specifications: BSS42, BSS43, BSS44, BSS45, BSS46, BSS47, BSS48, BSS49, 2SC5198, BSS51, BSS52, BSS53, BSS53A, BSS53B, BSS54, BSS54A, BSS54B

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