2N3165 Datasheet and Replacement

   Type Designator: 2N3165
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: TO61
      - BJT Cross-Reference Search