BSS60 Specs and Replacement
Type Designator: BSS60
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 4000
Package: TO39
BSS60 Substitution
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BSS60 datasheet
BSS606N OptiMOS -3 Small-Signal-Transistor Product Summary Features VDS 60 V N-channel RDS(on),max VGS=10 V 60 mW Enhancement mode VGS=4.5 V 90 Logic level (4.5V rated) ID 3.2 A Avalanche rated Qualified according to AEC Q101 PG-SOT-89 100%lead-free; Halogen-free; RoHS compliant 4 1 2 3 Type Package Tape and Reel Information Marking Halog... See More ⇒
NPN BSS60A-61A-62A SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS They are PNP transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . NPN complements are the BSS50A 51A 52A . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Valu... See More ⇒
Detailed specifications: BSS54, BSS54A, BSS54B, BSS55, BSS55A, BSS55B, BSS56, BSS59, 2N2907, BSS61, BSS62, BSS63, BSS63L, BSS64, BSS64R, BSS65, BSS65R
Keywords - BSS60 pdf specs
BSS60 cross reference
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BSS60 substitution
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