BST15 Specs and Replacement
Type Designator: BST15
SMD Transistor Code: BT1
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT89
BST15 Substitution
- BJT ⓘ Cross-Reference Search
BST15 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST15; BST16 PNP high-voltage transistors 1999 Apr 26 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification PNP high-voltage transistors BST15; BST16 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 emitter 2 collector APPLICATIONS... See More ⇒
SOT89 PNP SILICON PLANAR BST15 HIGH VOLTAGE TRANSISTOR ISSUE 3 FEBRUARY 1996 FEATURES * High VCEO C * Low saturation voltage COMPLEMENTARY TYPE BST40 E PARTMARKING DETAIL BT1 C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage VEBO -4 V Peak Pulse Current ICM... See More ⇒
Detailed specifications: BSS81B, BSS81C, BSS82, BSS82B, BSS82BL, BSS82C, BSS82CL, BSS99, 2SD1047, BST16, BST39, BST40, BST50, BST51, BST52, BST60, BST61
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