2N317 PDF and Equivalents Search

 

2N317 Specs and Replacement

Type Designator: 2N317

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 6 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO5

 2N317 Substitution

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2N317 datasheet

 0.1. Size:12K  semelab

2n3174.pdf pdf_icon

2N317

2N3174 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒

 0.2. Size:196K  inchange semiconductor

2n3171h.pdf pdf_icon

2N317

isc Silicon PNP Power Transistor 2N3171H DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Be processed in accordance with the requirements of BS, CECC,and JAN,JANTX and JANTXV and JAN specifications. ABSOLUTE MAXIM... See More ⇒

 0.3. Size:173K  inchange semiconductor

2n3173.pdf pdf_icon

2N317

isc Silicon PNP Power Transistor 2N3173 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,C... See More ⇒

 0.4. Size:173K  inchange semiconductor

2n3172.pdf pdf_icon

2N317

isc Silicon PNP Power Transistor 2N3172 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= -0.75V(Max)@ I = -1A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,C... See More ⇒

Detailed specifications: 2N3163 , 2N3164 , 2N3165 , 2N3166 , 2N3167 , 2N3168 , 2N3169 , 2N316A , 2SC5200 , 2N3170 , 2N3171 , 2N3172 , 2N3173 , 2N3174 , 2N3175 , 2N3176 , 2N3177 .

History: 2SB786 | 2SB79

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