All Transistors. 2N317 Datasheet

 

2N317 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N317

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 6 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 85 °C

Transition Frequency (ft): 8 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO5

2N317 Transistor Equivalent Substitute - Cross-Reference Search

 

2N317 Datasheet (PDF)

1.1. 2n3174.pdf Size:12K _semelab

2N317

2N3174 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acco

Datasheet: 2N3163 , 2N3164 , 2N3165 , 2N3166 , 2N3167 , 2N3168 , 2N3169 , 2N316A , 2N2222A , 2N3170 , 2N3171 , 2N3172 , 2N3173 , 2N3174 , 2N3175 , 2N3176 , 2N3177 .

 

 
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