BST51 Specs and Replacement
Type Designator: BST51
SMD Transistor Code: AS2
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: SOT89
BST51 Substitution
- BJT ⓘ Cross-Reference Search
BST51 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST50; BST51; BST52 NPN Darlington transistors 1999 Apr 26 Product specification Supersedes data of 1997 Apr 16 Philips Semiconductors Product specification NPN Darlington transistors BST50; BST51; BST52 FEATURES PINNING High current (max. 0.5 A) PIN DESCRIPTION Low voltage (max. 80 V) 1 emitter Integrated dio... See More ⇒
Detailed specifications: BSS82C, BSS82CL, BSS99, BST15, BST16, BST39, BST40, BST50, S8550, BST52, BST60, BST61, BST62, BSV10, BSV10-10, BSV10-16, BSV10-6
Keywords - BST51 pdf specs
BST51 cross reference
BST51 equivalent finder
BST51 pdf lookup
BST51 substitution
BST51 replacement
