BSV16-10 Datasheet, Equivalent, Cross Reference Search
Type Designator: BSV16-10
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 63
Noise Figure, dB: -
Package: TO39
BSV16-10 Transistor Equivalent Substitute - Cross-Reference Search
BSV16-10 Datasheet (PDF)
bsv15 bsv16 bsv17 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D111BSV15; BSV16; BSV17PNP medium power transistors1997 Apr 22Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP medium power transistors BSV15; BSV16; BSV17FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V)
bsv15 bsv16 bsv17.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS BSV15BSV16BSV17TO- 39ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BSV15 BSV16 BSV17 UNITCollector -Emitter Voltage VCEO 40 60 80 VCollector -Emitter Voltage VCES 40 60 90 VEmitter -Base Voltage VEBO 5.0 5.0 5.0 VCollector Current (DC) IC 1.0 ABa
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
