BSV16-10 Specs and Replacement
Type Designator: BSV16-10
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 63
Package: TO39
BSV16-10 Substitution
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BSV16-10 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSV15; BSV16; BSV17 PNP medium power transistors 1997 Apr 22 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP medium power transistors BSV15; BSV16; BSV17 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V)... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BSV15 BSV16 BSV17 TO- 39 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BSV15 BSV16 BSV17 UNIT Collector -Emitter Voltage VCEO 40 60 80 V Collector -Emitter Voltage VCES 40 60 90 V Emitter -Base Voltage VEBO 5.0 5.0 5.0 V Collector Current (DC) IC 1.0 A Ba... See More ⇒
Detailed specifications: BSV12-10, BSV12-16, BSV12-6, BSV15, BSV15-10, BSV15-16, BSV15-6, BSV16, TIP42, BSV16-16, BSV16-6, BSV17, BSV17-10, BSV17-16, BSV17-6, BSV19, BSV21
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